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Si1046R
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET: 1.8 V Rated
V DS (V)
R DS(on) ( ? )
I D (A)
a
Q g (Typ.)
? ESD Protected: 2000 V
0.420 at V GS = 4.5 V
0.606
? Material categorization:
20
0.501 at V GS = 2.5 V
0.660 at V GS = 1.8 V
0.505
0.150
0.92
For definitions of compliance please see
www.vishay.com/doc?99912
SC75-3L
APPLICATIONS
? Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
G
1
Memories
? Battery Operated Systems
? Power Supply Converter Circuits
S
2
Top V ie w
3
D
? Load/Power Switching Cell Phones, Pagers
Marking Code: J
Orderin g Information:
Si1046R-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwi se noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
20
±8
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
0.606 b, c
0.485 b, c
2.5
0.21 b, c
0.25 b, c
0.16 b, c
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, d
t ?? 5 s
Steady State
R thJA
440
540
530
650
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 74595
S13-0195-Rev. D, 28-Jan-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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